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2SB1290 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2SB1290
подробное описание детали  isc Silicon PNP Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1290 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB1290
DESCRIPTION
·
High Collector Current:: IC= -7A
·
Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -4A
·
Wide Area of Safe Operation
·
Complement to Type 2SD1833
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-10
A
PC
Total Power Dissipation
@ Ta=25℃
2
W
Total Power Dissipation
@ TC=25℃
30
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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