2SB1283 datasheet(1/2 Pages) ISC

номер детали	2SB1283

подробное описание детали	isc Silicon PNP Darlingtion Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

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isc Silicon PNP Darlingtion Power Transistor

2SB1283

DESCRIPTION

·

High DC Current Gain-

: hFE= 1500(Min.)@IC= -3A

·

Low Collector Saturation Voltage-

: VCE(sat)= -1.5V(Max)@IC= -3A

·

Good Linearity of hFE

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

High power switching applications.

·

Hammer drive, pulse motor drive applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-7

A

ICM

Collector Current-Peak

-10

A

IB

Base Current-Continuous

-0.5

A

IBM

Base Current-peak

-1

A

PC

Collector Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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Аналогичный номер детали - 2SB1283

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