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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SB1236 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1236 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB1236 DESCRIPTION · High breakdown voltage. (BVCEO = -120V) · Low collector output capacitance. · High transition frequency. (fT = 50MHz) · Complement to Type 2SD1857 APPLICATIONS · Designed for audio amplifier, voltage regulator, and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse -3 A PC Collector Power Dissipation 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SB1236 |
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Аналогичное описание - 2SB1236 |
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