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2SB1231 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2SB1231
подробное описание детали  isc Silicon PNP Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1231 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB1231
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·
High Current Capability
·
Wide Area of Safe Operation
·
Complement to Type 2SD1841
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for motor drivers, converters and other general
High-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-25
A
ICP
Collector Current-Pulse
-40
A
IB
Base Current-Continuous
-8
A
PC
Collector Power Dissipation
@ Ta=25℃
3
W
Collector Power Dissipation
@ TC=25℃
120
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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