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2SB1077 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2SB1077
подробное описание детали  isc Silicon PNP Darlington Power Transistor
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
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2SB1077 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
1
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
2SB1077
DESCRIPTION
·
Silicon NPN triple diffused
·
Low Collector-Emitter Saturation Voltage
·
Complement to Type 2SD1558
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-8
A
PC
Collector Power Dissipation
TC=25℃
40
W
Collector Power Dissipation
Ta=25℃
2
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.125
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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