| поискавой системы для электроныых деталей |
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2N6579 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6579 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N6579 DESCRIPTION · Excellent Safe Operating Area · High Voltage,High Speed · Low Saturation Voltage · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Off-line power supplies · Switching amplifiers · Inverters/Converters · Motor speed control circuits · Switching regulator · Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 9.0 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Аналогичный номер детали - 2N6579 |
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Аналогичное описание - 2N6579 |
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