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ABX0618M датащи(PDF) 2 Page - Advanced Semiconductor Business Inc.

номер детали ABX0618M
подробное описание детали  Wide Band Power Amplifier MMIC
PDF  18 Pages
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производитель  ASB [Advanced Semiconductor Business Inc.]
домашняя страница  http://www.asb.co.kr
Logo ASB - Advanced Semiconductor Business Inc.

ABX0618M датащи(HTML) 2 Page - Advanced Semiconductor Business Inc.

  ABX0618M Datasheet HTML 1Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 2Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 3Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 4Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 5Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 6Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 7Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 8Page - Advanced Semiconductor Business Inc. ABX0618M Datasheet HTML 9Page - Advanced Semiconductor Business Inc. Next Button
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ASB Inc.
 sales@asb.co.kr
July 2017
ABX0618M
Preliminary
2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25
C, VDD = +7 V, CW, ZO = 50 
Parameters
Test Conditions
Min
Typ
Max
Units
Gate Bias Voltage
f = 6.0 - 18.0 GHz
-0.87
V
Output Power at Psat1)
f = 6.0 - 18.0 GHz
31
dBm
Small signal gain
f = 6.0 - 18.0 GHz
25
dB
Input Return Loss
f = 6.0 - 18.0 GHz
-10
dB
Output Return Loss
f = 6.0 - 18.0 GHz
-5
dB
Supply Current
VDD = +7 V
700
mA
1) Psat: Saturated output power
2.2 Product Specification
Test conditions : T = +25
C, VDD= +7 V, CW, VGG = -0.87 V typical, ZO = 50 
Parameter
Min
Typ
Max
Unit
Frequency
6.0
18.0
GHz
Small Signal Gain
25
dB
Input Return Loss
-10
dB
Output Return Loss
-5
dB
Supply Current
700
mA
2.3 Absolute Maximum Ratings
Parameters
Max. Ratings
Operating Case Temperature (Tc)
-40 to
85 C
Storage Temperature (Tstg)
-55 to
125 C
Drain Voltage (VDD)
+8 V
Gate Voltage (VGG)
-1.5 to -0.5 V
Input RF Power (Pin)
18 dBm



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