ASX1037 datasheet(2/14 Pages) ASB

номер детали	ASX1037

подробное описание детали	X Band Power Amplifier MMIC

PDF	14 Pages

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производитель	ASB [Advanced Semiconductor Business Inc.]

домашняя страница	http://www.asb.co.kr

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ASB Inc.

 sales@asb.co.kr

June 2017

ASX1037

2. Summary on Product Performances

2.1 Typical Performance

Test conditions : T = +25

C, VDD = +7 V, CW, ZO = 50 

Parameters

Test Conditions

Min

Typ

Max

Units

Gate Bias Voltage

f = 8.5 - 10.5 GHz

-1.05

-0.6

Output Power at Psat1)

f = 8.5 - 10.5 GHz

dBm

Power Gain at Psat1)

f = 8.5 - 10.5 GHz

Drain Current at Psat1)

f = 8.5 - 10.5 GHz

1800

2200

Power Added Efficiency at Psat1)

f = 8.5 - 10.5 GHz

Gain Flatness

f = 8.5 - 10.5 GHz

1.5

2.0

Input Return Loss

f = 8.5 – 10.5 GHz

-10

-6

Output Return Loss

f = 8.5 - 10.5 GHz

-12

-8

Output TOI2)

f = 10 MHz

2-Tone Test

Output power / Tone = +28 dBm

dBm

Supply Current

VDD = +7 V

1300

1) Psat: Saturated output power

2) TOI: Third order intercept point

2.2 Product Specifications

Test conditions : T = +25

C, VDD= +7 V, CW, VGG = -1.05 V typical, ZO = 50 

Parameter

Min

Typ

Max

Unit

Frequency

8.5

10.5

GHz

Small Signal Gain

Input Return Loss

-10

-6

Output Return Loss

-12

-8

Supply Current

1300

2.3 Absolute Maximum Ratings

Parameters

Max. Ratings

Operation Case Temperature (Tc)

-40 to

85 C

Storage Temperature (Tstg)

-55 to

125 C

Drain Voltage (VDD)

+9 V

Gate Voltage (VGG)

-5.0 to -0.6 V

Input RF Power (CW)

+30 dBm

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