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ASX1536 датащи(PDF) 2 Page - Advanced Semiconductor Business Inc. |
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ASX1536 датащи(HTML) 2 Page - Advanced Semiconductor Business Inc. |
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2 / 13 page ![]() 2/13 ASB Inc. sales@asb.co.kr January 2017 ASX1536 2. Summary on Product Performances 2.1 Typical Performance Test conditions : T = +25 C, VDD = +7 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 13.5 - 16.0 GHz -0.99 V Output Power at Psat1) f = 13.5 – 15.0 GHz 37 dBm Output Power at Psat1) f = 15.5 GHz 36 dBm Output Power at Psat1) f = 16.0 GHz 35 dBm Small signal gain f = 13.5 - 16.0 GHz 22 dB Input Return Loss f = 13.5 - 16.0 GHz -9 dB Output Return Loss f = 13.5 - 16.0 GHz -9 dB Supply Current VDD = +7 V 1300 mA 1) Psat: Saturated output power 2.2 Product Specification Test conditions : T = +25 C, VDD= +7 V, CW, VGG = -0.99 V typical, ZO = 50 Parameter Min Typ Max Unit Frequency 13.5 16.00 GHz Small Signal Gain 22 dB Input Return Loss -9 dB Output Return Loss -9 dB Supply Current 1300 mA 2.3 Absolute Maximum Ratings Parameters Max. Ratings Operating Case Temperature (Tc) -40 to 85 C Storage Temperature (Tstg) -55 to 125 C Drain Voltage (VDD) +9 V Gate Voltage (VGG) -1.5 to -0.5 V Input RF Power (Pin) 23dBm |
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