TP856LED03 datasheet(1/4 Pages) JIANGSU

номер детали	TP856LED03

подробное описание детали	WBFBP-03E Plastic-Encapsulate Transistors

PDF	4 Pages

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производитель	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

домашняя страница	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03E Plastic-Encapsulate Transistors

TP85

6LED03

TRANSISTOR (PNP)

FEATURE

 Low Current

 Low Voltage

 Ultra Small SMD Plastic Package

 For General-purpose Switching and Amplification

MARKING: D

1

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-

80

V

VCEO

Collector-Emitter Voltage

-

65

V

VEBO

Emitter-Base Voltage

-

5

V

IC

Collector Current

-100

mA

PC

Collector Power Dissipation

100

mW

RΘJA

Thermal Resistance from Junction to Ambient

1250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test condition

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-10µA, IE=0

-

80

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA, IB=0

-

65

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1µA, I C=0

-

5

V

Collector cut-off current

ICBO

VCB=-

70V, IE=0

-0.1

uA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

DC current gain

hFE

CE

=-5V, IC=-2mA

220

475

Collector-emitter saturation voltage

VCE(sat)

C

=-100mA, IB=-5mA

-0.5

Base-emitter saturation voltage

VBE(sat)

C

=-100mA, IB=-5mA

-1.1

V

Transition frequency

fT

VCE=-5V,IC=-10mA,f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

4.5

pF

WBFBP-03E

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A-2,Nov,2016

www.cj-elec.com

Collector cut-off current

VCE= -60 V , IB=0

ICEO

-1

uA

-0.1

V

I

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