TSHA6200, TSHA6201, TSHA6202, TSHA6203

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 24-Aug-11

1

Document Number: 81021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION

The TSHA620. series are infrared, 875 nm emitting diodes in

GaAlAs technology, molded in a clear, untinted plastic

package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength:

• High reliability

• Angle of half intensity:

ϕ = ± 12°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

Note

www.vishay.com/doc?99902

APPLICATIONS

• Infrared remote control and free air data transmission

systems

• This emitter series is dedicated to systems with panes in

transmission space between emitter and detector,

because of the low absorbtion of 875 nm radiation in glass

Note

• Test conditions see table “Basic Characteristics“

Note

• MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

TSHA6200

40

± 12

875

600

TSHA6201

50

± 12

875

600

TSHA6202

60

± 12

875

600

TSHA6203

65

± 12

875

600

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHA6200

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6201

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6202

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6203

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾