SSG3110 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG3110

2.2A, 100V, RDS(O ) 310 mΩ

Ω

Dual-

Enhancement Mode Power MOSFET

02-Sep-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

BVDSS

100

VGS=0, ID=250µA

Gate-Threshold Voltage

VGS(th)

2.5

VDS=VGS, ID=250µA

Gate-Body Leakage Current

IGSS

±100

VGS= ±20V

VDS=80V, VGS=0, TJ=25°C

Zero Gate Voltage Drain Current

IDSS

µA

VDS=80V, VGS=0, TJ=55°C

260

310

VGS=10V, ID=2A

Drain-Source On-Resistance

RDS(ON)

270

320

VGS=4.5V, ID=1A

Forward Transconductance

gfs

VDS=5V, ID=2A

Input Capacitance

Ciss

508

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

16.4

VDS=15V

VGS=0

f=1MHz

Total Gate Charge

9.1

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

1.4

VDS=50V,

VGS=10V

ID=2A

Turn-On Delay Time

Td(on)

Rise Time

21.6

Turn-Off Delay Time

Td(off)

11.2

Fall Time

18.8

VDD=50V

VGS=10V

ID=2A

RL=30

RG=3.3

Source-Drain Diode

Diode Forward Voltage

VSD

1.2

IS=1A, VGS=0

Continuous Source Current

2.2

Pulsed Source Current

ISM

5.5

VD=VG=0V, Force Current

Reverse Recovery Time

Trr

17.5

Reverse Recovery Charge

Qrr

IF=2A, dl/dt=100A/µs, TJ=25°C

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper pad.

Pulse Test: Pulse width≦300µs, duty cycle≦2%.

The power dissipation is limited by 150°C junction temperature.

SSG3110 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSG3110 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

датащи скачать

ссылки URL