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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSG60P05J датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG60P05J датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente SSG60P05J -5 A, -60 V, RDS(ON) 80 mΩ Ω Ω Ω P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSG60P05J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation APPLICATIONS Power switching application Hard switched and high frequency circuits DC-DC converter MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 4K 13 inch MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -5 A Pulsed Drain Current 1 IDM -25 A Thermal Resistance from Junction to Ambient 2 RθJA 100 °C / W Lead Temperature for Soldering Purposes@1/8’’ from case for 10s TL 260 °C Operating Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C Q60P05 = Date Code S S S G D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.700 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.17 0.25 N 0.25 REF. G 1.27 TYP. SOP-8 |
Аналогичный номер детали - SSG60P05J |
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Аналогичное описание - SSG60P05J |
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