SSF2101 datasheet(2/3 Pages) SECOS

номер детали	SSF2101

подробное описание детали	P-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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2 / 3 page

Elektronische Bauelemente

SSF2101

-1.4A, -20V, RDS(O ) 100 mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

08-Feb-2017 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID= -250µA

Gate-Threshold Voltage

VGS(th)

-0.45

-0.7

VDS=VGS, ID= -250µA

Gate-Source Leakage Current

IGSS

±100

VDS=0, VGS= ±8V

Drain-Source Leakage Current

IDSS

-1

µA

VDS= -20V, VGS=0

100

VGS= -4.5V, ID= -1A

140

VGS= -2.5V, ID= -0.5A

Static Drain-Source On-Resistance

RDS(ON)

210

VGS= -1.8V, ID= -0.3A

Charges and Capacitances

Input Capacitance

Ciss

640

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

VDS= -8V

VGS=0

f=1MHz

Switching Characteristics

5.5

ID= -3A VDS= -10V VGS= -4.5V

Total Gate Charge

3.3

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

1.3

ID= -3A

VDS= -10V

VGS= -2.5V

Turn-on Delay Time

Td(on)

6.2

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD= -4V

VGS= -4.5V

RG=6.2

ID= -1A

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

-0.62

-1.2

IS= -0.3A, VGS=0

Notes:

Pulse Test: Pulse width≤300µs, duty cycle≤0.5%.

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