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SSD02N60SL датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSD02N60SL датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page ![]() Elektronische Bauelemente SSD02N60SL 2A , 600V , RDS(ON) 4.2 N-Ch Enhancement Mode Power MOSFET 18-Aug -2014 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-252 RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD02N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V TC=25°C 2 A Continuous Drain Current TC=100°C ID 1.3 A Pulsed Drain Current IDM 8 A TC=25°C 34 Total Power Dissipation Derate above 25°C PD 0.27 W Single Pulse Avalanche Energy 1 EAS 100 mJ Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 110 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.7 °C / W Notes: 1. L=30mH,IAS=2.52A, VDD=145V, RG=25 , Starting TJ =25°C 1 Gate 3 Source 2 Drain A C D N O P G E F H K J M B Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.80 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 |
Аналогичный номер детали - SSD02N60SL |
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Аналогичное описание - SSD02N60SL |
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