Elektronische Bauelemente

SID9971-S

N-Ch Enhancement Mode Power MOSFET

24-Mar-2017 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

60

-

-

V

Gate-Threshold Voltage

1

-

2.5

V

-

-

1

Drain-Source Leakage Current

-

-

25

µA

Gate-Source Leakage Current

-

-

±100

nA

Forward Transfer conductance

gfs

-

10

-

S

-

27

36

Static Drain-Source On-Resistance

3

-

31

45

m

-

12.5

-

Total Gate Charge

-

18

-

Gate-Source Charge

-

5

-

Gate-Drain (“Miller”) Charge

-

6

-

nC

Turn-on Delay Time

-

7

-

Turn-on Rise Time

-

9

-

Turn-off Delay Time

-

23

-

Turn-off Fall Time

-

6

-

nS

Input Capacitance

-

1572

-

Output Capacitance

-

58

-

Reverse Transfer Capacitance

-

39

-

pF

f=1MHz

Source-Drain Diode

Diode Forward Voltage

3

-

-

1.2

V

Continuous Source Current

1

-

-

25

Pulsed Source Current

2

-

-

50

A

Reverse Recovery Time

-

37

-

nS

Reverse Recovery Charge

-

38

-

nC

Notes:

1.

The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.

The power dissipation is limited by 150°C junc tion temperature

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%