SDT2P02 datasheet(1/4 Pages) SECOS

номер детали	SDT2P02

подробное описание детали	-2.2A, -20V, RDS(ON) 200 m(ohm) Dual-P Enhancement Mode MOSFET

PDF	4 Pages

Scroll/Zoom	100%

производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

Logo

1 / 4 page

Elektronische Bauelemente

SDT2P02

-2.2A, -20V, RDS(ON) 200 mΩ

Ω

Dual-P Enhancement Mode MOSFET

12-Aug-2017 Rev. D

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low RDS(on)

and to assure minimal power loss and heat dissipation.

FEATURES

Low RDS(on) trench technology

Low thermal impedance

Fast switching speed

APPLICATIONS

Battery-powered instruments

Portable computing

Mobile phones

GPS units and media players

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±8

V

TA=25°C

-2.2

Continuous Drain Current@ VGS= -4.5V

1

TA=70°C

ID

-1.7

A

Pulsed Drain Current

2

IDM

-8.8

A

Power Dissipation@ TA=25°C

1

PD

1.5

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

t≦5 sec

83

Maximum Thermal Resistance from

Junction to Ambient

1

Steady State

RθJA

125

°C / W

Package

MPQ

Leader Size

DFN2×2-6L-J

3K

7 inch

DFN2x2-6L-J

Millimeter

REF.

Min.

Typ.

Max.

REF.

Min.

Typ.

Max.

A

2.00 BSC.

G

0.30 BSC

B

2.00 BSC.

H

0.20 BSC

-

C

0.675

0.75

0.80

J

0

-

0.06

D

0.30 Typ.

K

0.15

0.20

0.25

E

0.75

0.86

1.1

L

0.20

0.30

0.38

F

0.65BSC

P

0.52

0.65

0.72

Аналогичный номер детали - SDT2P02

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	SDT2P03-C	516Kb / 4P	Dual-P Enhancement Mode MOSFET

More results

Аналогичное описание - SDT2P02

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	SMG2305P_1108	71Kb / 2P	-4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET
	SMG2343	1Mb / 4P	-4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET
	SMG5409	1Mb / 4P	-2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
	SSG4520H	440Kb / 6P	N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
	SSPS7321P	525Kb / 4P	-13A , -20V , RDS(ON) 14 m P-Ch Enhancement Mode Power MOSFET
	SST3585	654Kb / 7P	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
	STT3585	664Kb / 7P	3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
	STT4443	678Kb / 4P	-2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
Hi-Sincerity Mocroelect...	H2301N	93Kb / 4P	P-Channel Enhancement-Mode MOSFET (-20V, -2.2A)
SeCoS Halbleitertechnol...	SDT3N03	343Kb / 4P	3.5A, 30V, RDS(ON) 55 m(ohm) Dual-N Enhancement Mode MOSFET

More results

SDT2P02 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

SDT2P02 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Аналогичный номер детали - SDT2P02

Аналогичное описание - SDT2P02

Html Pages

1 2 3 4

датащи скачать

ссылки URL