Elektronische Bauelemente

SCG3139K

Ω

Ω

Ω

P Channel Enhancement MOSFET

16-Jan-2017 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

-20

-

-

V

Zero Gate Voltage Drain Current

-

-

-1

µA

Gate-Body Leakage Current

-

-

±20

µA

Gate Threshold Voltage

1

-0.35

-

-1.1

V

-

-

520

-

-

700

Drain-Source On-Resistance

1

-

950

-

m

Forward Transconductance

1

-

1.2

-

S

Diode forward voltage

-

-

-1.2

V

Dynamic Characteristics

Input Capacitance

-

113

-

Output Capacitance

-

15

-

Reverse Transfer Capacitance

-

9

-

pF

f=1MHz

Switching Characteristics

2

Turn-On Delay Time

-

9

-

Rise Time

-

5.8

-

Turn-Off Delay Time

-

32.7

-

Fall Time

-

20.3

-

nS

Notes:

1.

Pulse Test : Pulse Width=300µs, Duty Cycle=2%.

2.

Switching characteristics are independent of operating junction temperatures.

.