MPS651 datasheet(1/2 Pages) SECOS

номер детали	MPS651

подробное описание детали	0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor

PDF	2 Pages

Scroll/Zoom	100%

производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

Logo

1 / 2 page

Elektronische Bauelemente

MPS651

0.625 W, 2 A, 60 V

NPN Plastic Encapsulated Transistor

18-Dec-2009 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

3

Base

1

Emitter

Collector

2

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Switching and Amplifier Applications

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector - Base Voltage

VCBO

80

V

Collector - Emitter Voltage

VCEO

60

V

Emitter - Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

2

A

Collector Dissipation

Pc

0.625

W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector-Base Breakdown Voltage

V(BR)CBO

80

-

V

IC=100

µA, I

E = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO*

60

-

V

IC=10 mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=10

µA, I

C = 0

Collector Cut-Off Current

ICBO

-

0.1

µA

VCB=80 V, IE = 0

Emitter Cut-Off Current

IEBO

-

0.1

µA

VEB=4 V, IC = 0

HFE(1) *

75

-

VCE=2V, IC=50mA

HFE(2) *

75

-

VCE=2V, IC=500mA

HFE(3) *

75

-

VCE=2V, IC=1A

DC Current Gain

HFE(4) *

40

-

VCE=2V, IC=2A

-

0.5

V

IC=2A, IB=200mA

Collector-Emitter Saturation Voltage

VCE(sat) *

-

0.3

V

IC=1A, IB=100mA

Base-Emitter Saturation Voltage

VBE(sat) *

-

1.2

V

IC=1A, IB=100mA

Base-Emitter On Voltage

VBE(on) *

-

1

V

VCE=2V, IC=1A

Transition Frequency

fT

75

-

MHz

VCE = 5V, IC = 50 mA, f = 100 MHz

TO-92

Millimeter

REF.

Min.

Max.

A

4.40

4.70

B

4.30

4.70

C

12.70

-

D

3.30

3.81

E

0.36

0.56

F

0.36

0.51

G

1.27 TYP.

H

1.10

-

J

2.42

2.66

K

0.36

0.76

A

C

E

K

F

D

B

G

H

J

Аналогичный номер детали - MPS651

производитель	номер детали	датащи	подробное описание детали
KEC(Korea Electronics)	MPS651	73Kb / 3P	EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE)
Fairchild Semiconductor	MPS651	57Kb / 3P	Switching and Amplifier Applications
ON Semiconductor	MPS651	103Kb / 6P	Amplifier Transistors May, 2005 ??Rev. 2
ON Semiconductor	MPS651	74Kb / 5P	Amplifier Transistors April, 2007 ??Rev. 3
Micro Commercial Compon...	MPS651	233Kb / 3P	NPN Encapsulate Transistors

More results

Аналогичное описание - MPS651

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	2N5172	81Kb / 1P	NPN Plastic Encapsulated Transistor
	2N5832	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2N6517	142Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1008	83Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC1318A	135Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC1923	83Kb / 1P	NPN Plastic Encapsulated Transistor
	D882S	214Kb / 2P	NPN Plastic Encapsulated Transistor
	2SC4548	77Kb / 1P	NPN Plastic Encapsulated Transistor
	2SBA42	74Kb / 1P	NPN Plastic Encapsulated Transistor
	2SC2668	140Kb / 2P	NPN Plastic-Encapsulated Transistor

More results

MPS651 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

MPS651 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Аналогичный номер детали - MPS651

Аналогичное описание - MPS651

Html Pages

1 2

датащи скачать

ссылки URL