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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMBT3904M датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT3904M датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  MMBT3904M 0.2A, 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 17-Jun-2016 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 1N RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small package MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-723 8K 7 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 6 V Continuous Collector Current IC 200 mA Power Dissipation PC 100 mW Thermal Resistance from Junction to Ambient R θJA 1250 °C/ W Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=10 µA, I E=0 Collector to Emitter Breakdown Voltage V(BR)CEO 40 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=10 µA, I C=0 Collector Cut-Off Current ICEX - - 50 nA VCE=30V, VBE(off)= -3V Emitter Cut-Off Current IEBO - - 100 nA VEB=5V, IC=0 DC Current Gain hFE 40 - - VCE=1V, IC=0.1mA 70 - - VCE=1V, IC=1mA 100 - 300 VCE=1V, IC=10mA 60 - - VCE=1V, IC=50mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.2 V IC=10mA, IB=1mA - - 0.3 IC=50mA, IB=5mA Base to Emitter Saturation Voltage VBE(sat) 0.65 - 0.85 V IC=10mA, IB=1mA - - 0.95 IC=50mA, IB=5mA Transition Frequency fT - 300 - MHz VCE=20V, IC=10mA, f=100MHz Output Capacitance Cob - 4 - pF VCB=5V, IE=0, f=1MHz Input Capacitance Cib - 8 - pF VEB=0.5V, IC=0, f=1MHz Noise Figure NF - 5 - dB VCE=5V, IC=0.1mA, f=100MHz, RS=1k Delay Time td - 35 - ns VCC=3V, VBE(off)= -0.5V, IC=10mA, IB1=1mA Rise Time tr - 35 - Storage Time ts - 200 - VCC=3V, IC=10mA, IB1=IB2=1mA Fall Time tf - 50 - SOT-723 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.150 1.250 F 0.170 0.270 B 0.750 0.850 G 0.270 0.370 C - 0.500 H 0 0.050 D 1.150 1.250 I - 0.150 E 0.800TYP. |
Аналогичный номер детали - MMBT3904M |
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Аналогичное описание - MMBT3904M |
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