Elektronische Bauelemente

EMH3

Dual NPN Digital Transistors

(Built-in Resistors)

28-Mar-2016 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Two DTC143T chips in a UMT package.

The elements of transistors are independent without

interference.

With this package, the mounting cost and space can

be cut into half.

EQUIVALENT CIRCUIT

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-563

3K

7 inch

Parameter

Symbol

Value

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Collector Power Dissipation

150

mW

Junction and Storage Temperature

150, -55~150

°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector-Base Breakdown Voltage

50

-

-

Collector-Emitter Breakdown Voltage

50

-

-

V

Emitter-Base Breakdown Voltage

5

-

-

V

Collector Cut-Off Current

-

-

500

nA

Emitter Cut-Off Current

-

-

500

nA

Collector-Emitter Saturation Voltage

-

-

0.3

V

DC Current Transfer Ration

100

-

600

Input Resistance

3.29

4.7

6.11

K

Transition Frequency

-

250

-

MHz

SOT-563

H3

E

F

J

B

C

D

G

A

H

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.50

1.70

F

0.09

0.16

B

1.50

1.70

G

0.45

0.55

C

0.525

0.60

H

0.17

0.27

D

1.10

1.30

J

0.10

0.30

E

-

0.05