BCP8050 datasheet(1/2 Pages) SECOS

номер детали	BCP8050

подробное описание детали	1.5A, 40V NPN Epitaxial Planar Transistor

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

BCP8050

1.5A, 40V

NPN Epitaxial Planar Transistor

23-Sep-2014 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

3

Emitter

Collector

24

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The BCP8050 is suited for the output stage of audio,

voltage regulator, and relay driver.

MARKING

CLASSIFICATION OF hFE

Product Rank

BCP8050-C

BCP8050-D

Range

120~200

160~300

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-89

1K

7’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

1.5

A

Total Power Dissipation

PD

0.5

W

Junction & Storage temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

40

-

V

IC=100µA, IE=0

Collector-emitter breakdown

voltage

V(BR)CEO

25

-

V

IC=0.1mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

5

-

V

IE=100µA, IC=0

Collector cut-off current

ICBO

-

0.1

µ

A

VCB=40V, IE=0

Emitter cut-off current

ICEO

-

0.1

µ

A

VCE=20V, IE=0

Emitter cut-off current

IEBO

-

0.1

µ

A

VEB=5V, IC=0

120

-

300

VCE=1V, IC= 0.1A

DC current gain

hFE

40

-

VCE=1V, IC= 0.8A

Collector-emitter saturation voltage

VCE(sat)

-

0.5

V

IC=800mA, IB=80mA

Base-emitter saturation voltage

VBE(sat)

-

1.2

V

IC=800mA, IB=80mA

Base-emitter voltage

VBE

-

1

V

VCE=1V, IC=10mA

Base-emitter positive favor voltage

VBEF

-

1.55

V

IB=1A

Transition frequency

f T

-

100

-

MHz

VCE=10V, IC=50mA, f=30MHz

Output Capacitance

COB

-

15

-

pF

VCB=10V, IE=0, f=1MHz

SOT-89

A

E

C

D

B

K

H

F

G

L

J

1

2

3

4

Y1

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.60

G

0.40

0.58

B

3.94

4.25

H

1.50

TYP

C

1.40

1.60

J

3.00

TYP

D

2.30

2.60

K

0.32

0.52

E

1.50

1.70

L

0.35

0.44

F

0.89

1.2

0

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