RGF1A thru RGF1M

Vishay Semiconductors

formerly General Semiconductor

Document Number 88697

www.vishay.com

08-Feb-02

1

Surface Mount Glass Passivated Junction

Fast Switching Rectifier

Reverse Voltage 50 to 1000V

Forward Current 1.0A

Patented*

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.015 (0.38)

0.030 (0.76)

0.060 (1.52)

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.100 (2.54)

0.118 (3.00)

0.040 (1.02)

0.066 (1.68)

0.098 (2.49)

0.108 (2.74)

0.006 (0.152) TYP.

DO-214BA (GF1)

Features

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

• Ideal for surface mount automotive applications

• High temperature metallurgically bonded construction

• Cavity-free glass passivated junction

• Capable of meeting environmental standards of MIL-S-19500

• Built-in strain relief • Easy pick and place

• Fast switching for high efficiency

• High temperature soldering guaranteed:

450°C/5 seconds at terminals.

• Complete device submersible temperature of 265°C for

10 seconds in solder bath

Mechanical Data

Case: JEDEC DO-214BA, molded plastic over glass body

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.0048 oz, 0.12 g

Packaging codes/options:

19/6.5K per 13” Reel (12mm Tape)

17/1.5K per 7” Reel (12mm Tape)

Dimensions in inches and (millimeters)

Glass-plastic encapsulation technique is covered by Patent

No. 3,996,602, brazed-lead assembly by Patent No.

3,930,306 and lead forming by Patent No. 5,151,846

0.094 MAX.

(2.38 MAX.)

0.220

(5.58) REF

0.066 MIN.

(1.68 MIN.)

0.052 MIN.

(1.32 MIN.)

Mounting Pad Layout

Parameter

Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M

Unit

Device marking code

RA

RB

RD

RG

RJ

RK

RM

Maximum repetitive peak reverse voltage

50

100

200

400

600

800

1000

V

Maximum RMS voltage

35

70

140

280

420

560

700

V

Maximum DC blocking voltage

50

100

200

400

600

800

1000

V

1.0

A

Peak forward surge current 8.3ms single half sine-wave

30

A

superimposed on rated load (JEDEC Method)

50

µA

R

ΘJA

80

°C/W

R

ΘJL

28

Operating junction and storage temperature range

–65 to +175

°C

Parameter

Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M

Unit

Maximum instantaneous forward voltage at 1.0A

1.30

V

Maximum DC reverse current

5.0

µA

at rated DC blocking voltage

100

Typical reverse recovery time at

150

250

500

ns

Typical junction capacitance at 4.0V, 1MHz

8.5

pF

Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

®