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AWB578 датащи(PDF) 2 Page - Advanced Semiconductor Business Inc. |
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AWB578 датащи(HTML) 2 Page - Advanced Semiconductor Business Inc. |
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2 / 13 page ![]() 2/13 ASB Inc. sales@asb.co.kr April 2017 AWB578 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +8 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 30 250 512 50 500 1200 MHz Gain 20.8 20.0 19.7 20.2 19.7 18.5 dB S11 -16.0 -20.0 -20.0 -12.0 -15.0 -11.0 dB S22 -16.0 -20.0 -20.0 -16.0 -20.0 -11.0 dB Noise Figure 3.5 3.0 3.0 3.5 3.0 3.0 dB Output IP31) 43.0 43.5 42.0 42.0 42.0 40.5 dBm Output P1dB 27.0 27.0 27.0 27.0 27.0 26.0 dBm Current 176 176 mA Device Voltage +8.0 +8.0 V 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +8 V, TA = +25 C, ZO = 50 Parameter Min Typ Max Unit Frequency 500 MHz Gain 19.7 dB S11 -20.0 dB S22 -20.0 dB Noise Figure 3.0 dB OIP3 42.0 dBm P1dB 27.0 dBm Current 176 mA Device Voltage +8.0 V 2.3 Pin Configuration Pin Description Simplified Outline 2, 3 RF_IN 1, 4, 5, 8 Ground 6, 7 RF_OUT & Bias 1 2 3 4 5 6 7 8 |
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