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BFC50 датащи(PDF) 2 Page - Seme LAB

номер детали BFC50
подробное описание детали  4TH GENERATION MOSFET
PDF  5 Pages
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производитель  SEME-LAB [Seme LAB]
домашняя страница  http://www.semelab.co.uk
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BFC50 датащи(HTML) 2 Page - Seme LAB

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LAB
SEME
BFC50
Semelab plc. Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 8/95
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
23
92
1.3
160
320
640
2.7
5.5
11
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
310
310
92
SOA1
SOA2
ILM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
W
A
Characteristic
Min.
Typ.
Max. Unit
0.40
40
RθJC
RθJA
Junction to Case
Junction to Ambient
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
pF
nC
ns
2380
2950
522
730
196
290
83
130
12.6
19
51
76
14
28
27
55
61
92
36
71
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.



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