AST163 datasheet(8/9 Pages) ASB

номер детали	AST163

подробное описание детали	High Gain, Low Noise Amplifier

PDF	9 Pages

Scroll/Zoom	100%

производитель	ASB [Advanced Semiconductor Business Inc.]

домашняя страница	http://www.asb.co.kr

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ASB Inc.

 sales@asb.co.kr  Tel: +82-42-528-7225

February 2017

AST163

High Gain, Low Noise Amplifier

1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.

Schematic

S-parameters & K-factor

APPLICATION CIRCUIT

Board Layout (FR4, 23x13 mm2, 0.8T)

Note: 1) The length of the strip line P1 is given as below at

the PCB with Er = 4.5 and T = 0.8 mm.

P1 Length: 1.2 mm, Width: 0.3 mm

2) Gain and S11 are in trade-off and varied with the length of P1

Bottom

Parameter

Symbol

Unit

Frequency [MHz]

1950

Power Gain

Noise Figure

0.65

Input Return Loss

RLin

-10

Output Return Loss

RLout

-14

Gain

Compression

Output Power

Po(1dB)

dBm

3rd Intercept Point

Output Power1)

OIP3

dBm

Circuit Current

Top

WCDMA

1950 MHz

+5 V / 25 mA

1700

1800

1900

2000

2100

2200

2300

Frequency (MHz)

1700

1800

1900

2000

2100

2200

2300

-20

-15

-10

-5

Frequency (MHz)

1700

1800

1900

2000

2100

2200

2300

-20

-15

-10

-5

Frequency (MHz)

500

1000

1500

2000

2500

3000

3500

Frequency (MHz)

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