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ASL54T8 датащи(PDF) 3 Page - Advanced Semiconductor Business Inc. |
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ASL54T8 датащи(HTML) 3 Page - Advanced Semiconductor Business Inc. |
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3 / 16 page ![]() 3/16 ASB Inc. sales@asb.co.kr January 2017 ASL54T8 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 80 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1A Voltage Level: 400 V MM Class A Voltage Level: 50 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) |
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