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DF05122 датащи(PDF) 4 Page - Dynex Semiconductor |
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DF05122 датащи(HTML) 4 Page - Dynex Semiconductor |
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4 / 7 page ![]() 4/7 www.dynexsemi.com DF051 CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Maximum (limit) forward characteristics Fig.4 Recovered charge Fig.5 Typical reverse recovery current vs rate of rise of forward current 500 1000 1500 2000 2500 3000 0 1.0 2.0 3.0 4.0 Instantaneous forward voltage VF - (V) Measured under pulse conditions Tj = 150˚C Tj = 25˚C 3500 4000 0 100 200 300 400 500 1.0 1.2 1.4 1.6 Instantaneous forward voltage VF - (V) Measured under pulse conditions Tj = 150˚C Tj = 25˚C 1 10 100 1000 Rate of rise of reverse current dIR/dt - (A/µs) 1000 100 10000 100000 A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A E: IF = 100A A B C D E Conditions: Tj = 150˚C, VR = 100V I RR QS t p = 1ms I F dI R/dt Q S = 50µs 0 1 10 100 1000 Rate of rise of reverse current dIR/dt - (A/µs) 100 10 1000 10000 Conditions: Tj = 150˚C, VR = 100V A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A E: IF = 100A A B D E C |
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