IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices

www.irf.com

3

Radiation Performance of Rad Hard HEXFETs

Table 1. Low Dose Rate

† ‡

IRHM7450 IRHM8450

Parameter

100K Rads (Si) 1000K Rads (Si)

Units

Test Conditions

‰

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

500

—

500

—

V

Gate Threshold Voltage

…

2.0

4.0

1.25

4.5

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

50

—

50

µA

Static Drain-to-Source

…

—

0.45

—

0.6

Ω

On-State Resistance One

Diode Forward Voltage

…

—

1.6

—

1.6

V

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability. The hard-

ness assurance program at International Rectifier

comprises three radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MIL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of 12 volts per

note 6 and a V

device rated voltage per note 7. Pre- and post- irra-

(Si) are identical and are presented in Table 1, col-

umn 1, IRHM7450. Post-irradiation limits of the de-

Table 1, column 2, IRHM8450. The values in Table 1

will be met for either of the two low dose rate test

circuits that are used. Both pre- and post-irradiation

performance are tested and specified using the same

drive circuitry and test conditions in order to provide a

direct comparison.

High dose rate testing may be done on a special

(Si)/Sec (See Table 2).

International Rectifier radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments. Single Event Effects char-

acterization is shown in Table 3.

Table 2. High Dose Rate

ˆ

Parameter

Min Typ Max

Min Typ Max

Units

Test Conditions

Drain-to-Source Voltage

—

—

400

—

—

400

V

Applied drain-to-source voltage during

gamma-dot

IPP

—

8

—

—

8

—

A

Peak radiation induced photo-current

di/dt

—

—

15

—

—

3

A/µsec Rate of rise of photo-current

L1

27

—

—

133

—

—

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Ion

(µm)

(V)

(V)

Ni

28

~41

275

-5

Radiation

Characteristics