MMBT589 datasheet(2/6 Pages) FOSHAN

2 / 6 page

MMBT589

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-50

Collector to Emitter Voltage

VCEO

-30

Emitter to Base Voltage

VEBO

-5.0

Collector Current

-1.0

Collector Current − Peak

ICM

-2.0

Collector Power Dissipation

310

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-0.1mA

IE=0

-50

Collector to Emitter Breakdown

Voltage

VCEO

IC=-10mA

IB=0

-30

Emitter to Base Breakdown

Voltage

VEBO

IE=-0.1mA

IC=0

-5.0

Collector Cut-Off Current

ICBO

VCB=-30V

IE=0

-0.1

μA

Emitter Cutoff Current

IEBO

VEB=-4.0V

IE=0

-0.1

μA

Collector−Emitter Cutoff Current

ICES

VCES=-30V

IE=0

-0.1

μA

DC Current Gain

hFE(1)

VCE=-2.0V

IC=-500mA

100

300

hFE(2)

VCE=-2.0V

IC=-2.0A

hFE(3)

VCE=-2.0V

IC=-1.0A

hFE(4)

VCE=-2.0V

IC=-1.0mA

100

Collector −Emitter Saturation

Voltage

VCE(sat)(1) IC=-500mA

IB=-50mA

-0.25

VCE(sat)(2) IC=-1.0A

IB=-100mA

-0.30

VCE(sat)(3) IC=-2.0A

IB=-200mA

-0.65

Base−Emitter Saturation Voltage

VBE(sat)

IC=-1.0A

IB=-0.1A

-1.2

Base−Emitter Turn−on Voltage

VBE(ON)

IC=-1.0A

VCE=-2.0V

-1.1

Transition Frequency

IC=-100mA

VCE=-5.0V

f=100MHz

100

MHz

Collector Output Capacitance

Cobo

f=1.0MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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