2SC2334 datasheet(2/6 Pages) FOSHAN

номер детали	2SC2334

подробное описание детали	Silicon NPN transistor in a TO-220 Plastic Package.

PDF	6 Pages

Scroll/Zoom	100%

производитель	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

домашняя страница	http://www.fsbrec.com/

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2 / 6 page

2SC2334

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

150

Collector to Emitter Voltage

VCEO

100

Emitter to Base Voltage

VEBO

7.0

Collector Current - Continuous

7.0

Peak Collector Current*

*ICM

Base Current - Continuous

3.5

Collector Power Dissipation

1.5

PC(TC=25 )

℃

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

*:pw(

脉宽)≤300µs,duty cycle(占空比)≤10%.

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

100

Collector Cut-Off Current

ICBO

VCB=100V

IE=0

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

μA

DC Current Gain

*hFE(1)

VCE=5.0V

IC=3.0A

200

*hFE(2)

VCE=5.0V

IC=0.5A

*hFE(3)

VCE=5.0V

IC=5.0A

Collector to Emitter Saturation

Voltage*

*VCE(sat)

IC=5.0A

IB=0.5A

0.6

Base to Emitter Saturation

Voltage*

*VBE(sat)

IC=5.0A

IB=0.5A

1.5

Turn-On Time

ton

IC=5.0A

VCC=50V

IB1=-IB2=0.5A

RL=10Ω

0.5

μs

Storage Time

tstg

1.5

Fall Time

0.5

*:pw(

脉宽)≤350µs,duty cycle(占空比)≤2%.

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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