CSD18511KCS datasheet(3/10 Pages) TI1

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CSD18511KCS

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SLPS548 – JULY 2017

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5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 32 V

μA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, ID = 250 μA

1.5

1.8

2.4

RDS(on)

Drain-to-source on-resistance

VGS = 4.5 V, ID = 100 A

3.2

4.2

Ω

VGS = 10 V, ID = 100 A

2.1

2.6

gfs

Transconductance

VDS = 4 V, ID = 100 A

249

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = 20 V, ƒ = 1 MHz

4570

5940

Coss

Output capacitance

454

591

Crss

Reverse transfer capacitance

235

306

Series gate resistance

0.9

1.8

Ω

Gate charge total (4.5 V)

VDS = 20 V, ID = 100 A

Gate charge total (10 V)

Qgd

Gate charge gate-to-drain

9.7

Qgs

Gate charge gate-to-source

17.9

Qg(th)

Gate charge at Vth

7.4

Qoss

Output charge

VDS = 20 V, VGS = 0 V

20.7

td(on)

Turnon delay time

VDS = 20 V, VGS = 10 V,

IDS = 100 A, RG = 0 Ω

Rise time

td(off)

Turnoff delay time

Fall time

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 100 A, VGS = 0 V

0.9

1.0

Qrr

Reverse recovery charge

VDS= 20 V, IF = 100 A,

di/dt = 300 A/μs

trr

Reverse recovery time

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-case thermal resistance

0.8

°C/W

RθJA

Junction-to-ambient thermal resistance

°C/W

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