MCT2, MCT2E

OPTOCOUPLERS

SOES023 – MARCH 1983 – REVISED OCTOBER 1995

1

POST OFFICE BOX 655303

COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS

Optically Coupled to a Silicon npn

Phototransistor

Transistor Biasing

1.5-kV, or 3.55-kV Rating

General Instruments MCT2 and MCT2E

absolute maximum ratings at 25

Input-to-output voltage: MCT2

± 1.5 kV

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MCT2E

± 3.55 kV

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector-base voltage

70 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector-emitter voltage (see Note 1)

30 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter-collector voltage

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter-base voltage

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input-diode reverse voltage

3 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input-diode continuous forward current

60 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous power dissipation at (or below) 25

°C free-air temperature:

Infrared-emitting diode (see Note 2)

200 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Phototransistor (see Note 2)

200 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total, infrared-emitting diode plus phototransistor (see Note 3)

250 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . .

–55

°C to 100°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. This value applies when the base-emitter diode is open-circulated.

2. Derate linearly to 100

°C free-air temperature at the rate of 2.67 mW/°C.

3. Derate linearly to 100

°C free-air temperature at the rate of 3.33 mW/°C.

Copyright

 1995, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

1

2

3

6

5

4

ANODE

CATHODE

NC

BASE

COLLECTOR

EMITTER

MCT2 OR MCT2E ...PACKAGE

(TOP VIEW)

NC – No internal connection