IRF740FP datasheet(2/3 Pages) FCI

2 / 3 page

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25

CIRF740

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

(VGS = 0 V, ID = 250

V(BR)DSS

400

Drain-Source Leakage Current

(VDS = 400 V, VGS = 0 V)

(VDS = 400 V, VGS = 0 V, TJ = 125

)

IDSS

0.25

1.0

Gate-Source Leakage Current-Forward

(Vgsf = 20 V, VDS = 0 V)

IGSSF

100

Gate-Source Leakage Current-Reverse

(Vgsr = 20 V, VDS = 0 V)

IGSSR

...............-100

Gate Threshold Voltage

(VDS = VGS, ID = 250

VGS(th)

2.0

4.0

Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.0A) *

RDS(on)

................0.4...............

0.55

Drain-Source On-Voltage (VGS = 10 V)

(ID = 5.0 A)

VDS(on)

6.0

Forward Transconductance (VDS = 50 V, ID = 5.0A) *

gFS

..4.0................

mhos

Input Capacitance

Ciss

1570

Output Capacitance

Coss

230

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0 V,

f = 1.0 MHz)

Crss

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

(VDD = 200 V, ID = 10.0 A,

VGS = 10 V,

RG = 10 ) *

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

(VDS = 320 V, ID = 10.0 A,

VGS = 10 V)*

Qgd

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

4.5

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

7.5

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

VSD

.................2.0..................

Forward Turn-On Time

ton

Reverse Recovery Time

(IS = 10.0 A, VGS = 0 V,

dIS/dt = 100A/µs)

trr

250

* Pulse Test: Pulse Width

300µs, Duty Cycle

** Negligible, Dominated by circuit inductance

IRF740FP 10A 400V N CHANNEL POWER MOSFET

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