L412 datasheet(1/4 Pages) IXYS

номер детали	L412

подробное описание детали	High Voltage BIMOSFET

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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IXYS reserves the right to change limits, test conditions and dimensions.

Features

• High Voltage BIMOSFETTM

- substitute for high voltage MOSFETs

with significantly lower voltage drop

- fast switching for high frequency

operation

- reverse conduction capability

• ISOPLUS i4-PACTM

high voltage package

- isolated back surface

- enlarged creepage towards heatsink

- enlarged creepage between high

voltage pins

- application friendly pinout

- high reliability

- industry standard outline

Applications

• switched mode power supplies

• DC-DC converters

• resonant converters

• lamp ballasts

• laser generators, x ray generators

IGBT

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

IXBF 9N140

1400

V

IXBF 9N160

1600

V

GES

± 20

V

I

C25

T

C = 25°C

7

A

I

C90

T

C = 90°C

4

A

I

CM

V

GE = 15/0 V; RG = 100 W; TVJ = 125°C

12

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

0.8V

CES

P

tot

T

C = 25°C

70

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 5 A; VGE = 15 V; TVJ =

25°C

4.9

7

V

T

VJ = 125°C

5.6

V

GE(th)

I

C = 0.5 mA; VGE = VCE

48

V

I

CES

V

CE = 0.8VCES; VGE = 0 V; TVJ =

25°C

0.1

mA

T

VJ = 125°C

0.1

mA

I

GES

V

CE = 0 V; VGE = ± 20 V

500

nA

t

d(on)

200

ns

t

r

60

ns

t

d(off)

180

ns

t

f

40

ns

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

550

pF

Q

Gon

V

CE = 600V; VGE = 15 V; IC = 7 A

44

nC

V

F

(reverse conduction); I

F = 5 A

3.6

V

R

thJC

1.75 K/W

Inductive load, T

VJ = 125°C

V

CE = 960 V; IC = 5 A

V

GE =

15/0 V; R

G = 100 W

Advanced Technical Information

IXBF 9N140

IXBF 9N160

1

5

I

C25

= 7 A

V

CES

= 1400/1600 V

V

CE(sat) = 4.9V

t

f

= 40 ns

High Voltage

BIMOSFETTM

in High Voltage

ISOPLUS i4-PACTM

Monolithic Bipolar MOS Transistor

Аналогичный номер детали - L412

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Connor-Winfield Corpora...	L412-155.52	119Kb / 2P	5.0x7.0mm Surface Mount LVDS Clock Oscillator Series
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Аналогичное описание - L412

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L412 датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - L412

Аналогичное описание - L412

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