IRLML2402 datasheet(2/8 Pages) IRF

2 / 8 page

IRLML2402

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.024 V/°C Reference to 25°C, ID = 1mA

0.25

VGS = 4.5V, ID = 0.93A

0.35

VGS = 2.7V, ID = 0.47A

VGS(th)

Gate Threshold Voltage

0.70

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

1.3

VDS = 10V, ID = 0.47A

1.0

VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

-100

VGS = -12V

Gate-to-Source Reverse Leakage

100

VGS = 12V

Total Gate Charge

2.6

3.9

ID = 0.93A

Qgs

Gate-to-Source Charge

0.41 0.62

VDS = 16V

Qgd

Gate-to-Drain ("Miller") Charge

1.1

1.7

VGS = 4.5V, See Fig. 6 and 9

td(on)

Turn-On Delay Time

2.5

VDD = 10V

Rise Time

9.5

ID = 0.93A

td(off)

Turn-Off Delay Time

9.7

RG = 6.2Ω

Fall Time

4.8

RD = 11Ω, See Fig. 10

Ciss

Input Capacitance

110

VGS = 0V

Coss

Output Capacitance

VDS = 15V

Crss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Ω

µA

IGSS

IDSS

Drain-to-Source Leakage Current

RDS(on)

Static Drain-to-Source On-Resistance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

1.2

TJ = 25°C, IS = 0.93A, VGS = 0V

trr

Reverse Recovery Time

TJ = 25°C, IF = 0.93A

Qrr

Reverse RecoveryCharge

di/dt = 100A/µs

Source-Drain Ratings and Characteristics

7.4

0.54

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

SD ≤ 0.93A, di/dt ≤ 90A/µs, V

DD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 5sec.

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