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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6665 датащи(PDF) 2 Page - International Rectifier |
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IRF6665 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF6665 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A. Surface mounted on 1 in. square Cu board. Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Rθ is measured at TJ of approximately 90°C. Based on testing done using a typical device & evaluation board at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case temperature ∆TC is 55°C. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 53 62 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 1.9 2.9 Ω Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 6.6 ––– ––– S Qg Total Gate Charge ––– 8.7 11.7 VDS = 50V Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.1 ––– VGS = 10V Qgs2 Post-Vth Gate-to-Source Charge ––– 0.58 ––– ID = 5.0A Qgd Gate-to-Drain Charge ––– 2.8 ––– nC See Fig.6 and 16 Qgodr Gate Charge Overdrive ––– 3.2 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 3.38 ––– td(on) Turn-On Delay Time ––– 7.4 ––– tr Rise Time ––– 2.8 ––– td(off) Turn-Off Delay Time ––– 14 ––– ns tf Fall Time ––– 4.3 ––– Ciss Input Capacitance ––– 530 ––– Coss Output Capacitance ––– 110 ––– Crss Reverse Transfer Capacitance ––– 29 ––– pF Coss Output Capacitance ––– 510 ––– Coss Output Capacitance ––– 67 ––– Coss eff. Effective Output Capacitance ––– 130 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 4.2 (Body Diode) A ISM Pulsed Source Current ––– ––– 34 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 31 ––– ns Qrr Reverse Recovery Charge ––– 37 ––– nC VGS = 20V Max. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V g VDD = 50V ID = 5.0A RG = 6.0Ω VGS = -20V TJ = 25°C, IS = 5.0A, VGS = 0V f TJ = 25°C, IF = 5.0A, VDD = 25V di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.0A f VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz 11 5.0 Typ. ––– ––– Conditions VDS = 10V, ID = 5.0A |
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