Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

August 2004

ECP052

½ Watt, High Linearity InGaP HBT Amplifier

Product Information

The Communications Edge

TM

Product Features

4mm QFN package

Applications

Repeaters

Product Description

The ECP052 is a high dynamic range driver amplifier in

a low-cost surface mount package.

The InGaP/GaAs

HBT is able to achieve high performance for various

narrowband-tuned application circuits with up to +44

dBm OIP3 and +28.5 dBm of compressed 1dB power. It

is housed in an industry standard SOIC-8 or 16-pin

4x4mm QFN SMT package. All devices are 100% RF

and DC tested.

The ECP052 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required.

An internal active bias allows the

ECP052 to maintain high linearity over temperature and

operate directly off a single +5V supply.

This

combination makes the device an excellent candidate for

transceiver line cards in current and next generation

multi-carrier 3G base stations.

Functional Diagram

ECP052D

ECP052G

Specifications

(1)

Parameter

Units

Min

Typ

Max

Operational Bandwidth

MHz

800

1000

Test Frequency

MHz

850

Gain

dB

15.5

17

Output P1dB

dBm

+27

+28

Output IP3

(2)

dBm

+42.5

+44

Test Frequency

MHz

900

Gain

dB

15.5

17.8

Input Return Loss

dB

18

Output Return Loss

dB

7

Output P1dB

dBm

+27

+28.7

Output IP3

(2)

dBm

+42.5

+43

IS-95A Channel Power

@ -45 dBc ACPR, 1960 MHz

dBm

+23

Noise Figure

dB

7

Operating Current Range, Icc

(3)

mA

200

250

300

Device Voltage, Vcc

V

+5

1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a

reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100

Ω. (ie. total device current typically will be 262 mA.)

Absolute Maximum Rating

Ordering Information

Parameters

Rating

Part No.

Description

Operating Case Temperature

-40 to +85

°C

ECP052D

½ Watt InGaP HBT Amplifier (16p 4mm Pkg)

Storage Temperature

-65 to +150

°C

ECP052G

½ Watt InGaP HBT Amplifier (SOIC-8 Pkg)

RF Input Power (continuous)

+28 dBm

ECP052D-PCB900

900 MHz Evaluation Board

Device Voltage

+8 V

ECP052G-PCB900

900 MHz Evaluation Board

Device Current

400 mA

Device Power

2 W

Operation of this device above any of these parameters may cause permanent damage.

1

2

3

4

12

11

10

9

16

15

14

13

5

6

7

8

N/C

RF OUT

RF OUT

N/C

Vref

N/C

RF IN

N/C

1

2

3

4

8

7

6

5

Vref

N/C

RF IN

N/C

Vbias

RF OUT

RF OUT

N/C