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XVB1LUY50D датащи(PDF) 1 Page - SunLED Corporation |
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XVB1LUY50D датащи(HTML) 1 Page - SunLED Corporation |
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1 / 3 page ![]() Part Number: XVB1LUY50D 5mm One Position CBI Housing Nov 09,2016 XDSA2861 V8-Z Layout: Maggie L. P. 1/3 Features ● Housing material: Type 66 Nylon ● Black casing provides superior contrast ● Housing UL rating: 94V-0 ● Reliable & robust ● RoHS Compliant Absolute Maximum Ratings (TA=25°C) Yellow (GaAsP/GaP) Unit Reverse Voltage VR 5 V Forward Current IF 30 mA Forward Current (Peak) 1/10 Duty Cycle 0.1ms Pulse Width iFS 140 mA Power Dissipation PD 75 mW Operating Temperature TA -40 ~ +85 °C Storage Temperature Tstg -40 ~ +85 Lead Solder Temperature [2mm Below Package Base] 260°C For 3 Seconds Lead Solder Temperature [5mm Below Package Base] 260°C For 5 Seconds Package Schematics Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Specifications are subject to change without notice. Yellow (GaAsP/GaP) Unit Forward Voltage (Typ.) (IF=10mA) VF 1.95 V Forward Voltage (Max.) (IF=10mA) VF 2.5 V Reverse Current (Max.) (VR=5V) IR 10 uA Wavelength of Peak Emission CIE127-2007* (Typ.) (IF=10mA) λP 590* nm Wavelength of Dominant Emission CIE127-2007* (Typ.) (IF=10mA) λD 588* nm Spectral Line Full Width At Half-Maximum (Typ.) (IF=10mA) △ λ 35 nm Capacitance (Typ.) (VF=0V, f=1MHz) C 20 pF Operating Characteristics (TA=25°C) Part Number Emitting Color Emitting Material Lens-color Wavelength CIE127-2007* nm λP Viewing Angle 2θ 1/2 min. typ. XVB1LUY50D Yellow GaAsP/GaP Yellow Diffused 15* 29* 590* 30° Luminous Intensity CIE127-2007* (IF=10mA) mcd A Relative Humidity between 40% and 60% is recommended in ESD-protected work areas to reduce static build up during assembly process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033) *Luminous intensity value and wavelength are in accordance with CIE127-2007 standards. |
Аналогичный номер детали - XVB1LUY50D |
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Аналогичное описание - XVB1LUY50D |
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