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2SC5692 датащи(PDF) 4 Page - Toshiba Semiconductor |
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2SC5692 датащи(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC5692 2001-12-12 4 Collector-emitter voltage VCE (V) Transient Thermal Resistance rth – tw Pulse width tw (s) Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) 1000 1 0.001 100 10 0.01 0.1 1 10 100 1000 Safe Operating Area 10 0.01 0.1 1 10 100 0.1 1 IC max (pulsed) ♦ DC operation * (Ta = 25°C) 10 µs♦ 100 µs♦ 1 ms ♦ 100 ms ♦* 10 ms ♦ 10 s ♦* ♦: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature. IC max (continuous) |
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