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TPCS8205 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TPCS8205
подробное описание детали  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
PDF  7 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8205 датащи(HTML) 3 Page - Toshiba Semiconductor

  TPCS8205 Datasheet HTML 1Page - Toshiba Semiconductor TPCS8205 Datasheet HTML 2Page - Toshiba Semiconductor TPCS8205 Datasheet HTML 3Page - Toshiba Semiconductor TPCS8205 Datasheet HTML 4Page - Toshiba Semiconductor TPCS8205 Datasheet HTML 5Page - Toshiba Semiconductor TPCS8205 Datasheet HTML 6Page - Toshiba Semiconductor TPCS8205 Datasheet HTML 7Page - Toshiba Semiconductor  
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TPCS8205
2003-02-20
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
¾
¾
±10
µA
Drain cut-OFF current
IDSS
VDS = 20 V, VGS = 0 V
¾
¾
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
20
¾
¾
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −12 V
8
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 200 µA
0.5
¾
1.2
V
RDS (ON)
VGS = 2.0 V, ID = 3.5 A
¾
60
90
RDS (ON)
VGS = 2.5 V, ID = 3.5 A
¾
40
60
Drain-source ON resistance
RDS (ON)
VGS = 4 V, ID = 4 A
¾
30
45
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
5
10
¾
S
Input capacitance
Ciss
¾
760
¾
pF
Reverse transfer capacitance
Crss
¾
110
¾
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
130
¾
pF
Rise time
tr
¾
7
¾
Turn-ON time
ton
¾
13
¾
Fall time
tf
¾
13
¾
Switching time
Turn-OFF time
toff
¾
49
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
11
¾
nC
Gate-source charge
Qgs
¾
8
¾
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 5 A
¾
3
¾
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
IDRP
—
—
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
—
−1.2
V



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