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TC1300 датащи(PDF) 2 Page - Microchip Technology

номер детали TC1300
подробное описание детали  300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function
PDF  16 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC1300 датащи(HTML) 2 Page - Microchip Technology

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TC1300
DS21385C-page 2
 2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage ....................................................................6.5V
Output Voltage ................................. (VSS - 0.3) to (VIN + 0.3)
Power Dissipation ......................... Internally Limited (Note 6)
Operating Junction Temperature, T
J ....... – 40°C < T
J< 150°C
Maximum Junction Temperature, Tj .............................. 150°C
Storage Temperature .................................. – 65°C to +150°C
Maximum Voltage on Any Pin ............. (VSS-0.3) to (VIN+0.3)
*Notice: Stresses above those listed under “maximum rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
PIN DESCRIPTIONS
Pin
Description
RESET
RESET output remains low while VDET is
below the reset voltage threshold and for
300 msec after VDET rises above reset thesh-
old.
VOUT
Regulated Voltage Output
GND
Ground Terminal
Bypass
Reference Bypass Input. Connecting an
optional 470 pF to this input further reduces
output noise.
SHDN
Shutdown Control Input. The regulator is fully
enabled when a logic high is applied to this
input. The regulator enters shutdown when a
logic low is applied to this input. During shut-
down, regulator output voltage falls to zero,
RESET output remains valid and supply cur-
rent is reduced to 30 µA (typ.).
NC
No connect
VIN
Power Supply Input
VDET
Detected Input Voltage. VDET and VIN can be
connected together.
ELECTRICAL CHARACTERISTICS
VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Operating Voltage
VIN
2.7
—
6.0
V
Note 7
Maximum Output Current
IOUTMAX
300
——
mA
Output Voltage
VOUT
—
VR - 2.5%
VR ± 0.5%
—
—
VR + 2.5%
V
Note 1
VOUT Temperature Coefficient
∆VOUT/∆T—
25
—ppm/°C Note 2
Line Regulation
∆VOUT/∆VIN
—0.02
0.35
%(VR + 1V) < VIN < 6V
Load Regulation
∆VOUT/VOUT
—0.5
2.0
%IL = 0.1 mA to IOUTMAX, Note 3
Note 1: VR is the regulator output voltage setting.
2:
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + VDROPOUT).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
TCVOUT
VOUTMAX VOUTMIN
–
() 10
6
×
VOUT
T
∆
×
--------------------------------------------------------------------------------------
=



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