USF5G48 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

SF5G48,SF5J48,USF5G48,USF5J48

2001-07-13

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

RATING

UNIT

SF5G48

USF5G48

400

SF5J48

Repetitive Peak

Off−State Voltage

and Repetitive Peak

Reverse Voltage

USF5J48

VDRM

VRRM

600

SF5G48

USF5G48

500

SF5J48

Non−Repetitive Peak

Reverse Voltage

(Non−Repetitive < 5ms

Tj = 0~125°C)

USF5J48

VRSM

720

Average On−State Current

IT (AV)

R.M.S On−State Current

IT (RMS)

7.8

80 (50Hz)

Peak One Cycle Surge On−State

Current (Non−Repetitive)

ITSM

88 (60Hz)

t Limit Value

Critical Rate of Rise of

On−State Current

(Note 1)

di /dt

100

A / µs

Peak Gate Power Dissipation

PGM

Average Gate Power Dissition

PG (AV)

0.5

Peak Forward Gate Voltage

VFGM

Peak Reverse Gate Voltage

VRGM

−5

Peak Forward Gate Current

IGM

Junction Temperature

−40~125

°C

Strage Temperature Range

Tstg

−40~125

°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Repetitive Peak Off−State Current

and Repetitive Peak Reverse

IDRM

IRRM

VDRM = VRRM = Rated

―

µA

Peak On−State Voltage

VTM

ITM = 15A

―

1.5

Gate Trigger Voltage

VGT

―

1.0

Gate Trigger Current

IGT

VD = 6V, RL = 10Ω

―

Gate Non−Trigger Voltage

VGD

VD = Rated × 2 / 3, Tc = 125°C

0.2

―

Critical Rate of Rise of Off−State

Voltage

dv / dt

VDRM = Rated, Tc = 125°C

Exponential Rise

―

V / µs

Holding Current

VD = 6V, ITM = 1A

―

Latching Current

VD = 6V, f = 50Hz

tgw = 50µs, iG = 30mA

―

Thermal Resistance

Rth (j−c)

Junction to Case, DC

―

3.2

°C / W

Note 1:

VDRM = 0.5 × Rated

ITM ≤ 15A

tgw ≥ 10µs

tgr ≤ 250ns

igp = IGT × 2.0

USF5G48 датащи(PDF) 2 Page - Toshiba Semiconductor

USF5G48 датащи(HTML) 2 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL