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NP60N06VLK датащи(PDF) 2 Page - Renesas Technology Corp

номер детали NP60N06VLK
подробное описание детали  60 V ??60 A ??N-channel Power MOS FET
PDF  9 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP60N06VLK датащи(HTML) 2 Page - Renesas Technology Corp

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NP60N06VLK
R07DS1339EJ0100 Rev.1.00
Page 2 of 7
Apr 8, 2016
Absolute Maximum Ratings
(TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±60
A
Drain Current (pulse) ∗
1
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
105
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Repetitive Avalanche Current ∗
2
IAR
25
A
Repetitive Avalanche Energy ∗
2
EAR
63
mJ
Notes: *1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2. RG = 25 Ω, VGS = 20 V → 0 V
Thermal Resistance
Channel to Case Thermal Resistance
Rth(ch-C)
1.43
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W



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