ALD212908A/ALD212908

Advanced Linear Devices

2 of 12

Notes:

1

Consists of junction leakage currents

OPERATING ELECTRICAL CHARACTERISTICS

ALD212908A

ALD212908

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions

Gate Threshold Voltage

VGS(th)

0.78

0.80

0.82

0.78

0.80

0.82

V

IDS =20µA, VDS = 0.1V

Offset Voltage

VOS

12

2

10

mV

VGS(th)M1 - VGS(th)M2

Offset Voltage Tempco

TCVOS

55

µV/°CVDS1 = VDS2

GateThreshold Voltage Tempco

TCVGS(th)

-1.7

-1.7

mV/°CID = 20µA, VDS = 0.1V

0.0

0.0

ID = 760µA, VDS = 0.1V

+0.6

+1.6

ID = 1.5 mA, VDS = 0.1V

On Drain Current

IDS(ON)

79

79

mA

VGS = +3.8V, VDS = +3V

85

85

µAVGS = +0.9V, VDS = +0.1V

Forward Transconductance

GFS

38

38

mmho

VGS = +3.8V

VDS = +3.0V

Transconductance Mismatch

∆GFS

1.8

1.8

%

Output Conductance

GOS

2.3

2.3

mmho

VGS = +3.8V

VDS = +3.0V

Drain Source On Resistance

RDS(ON)

14

14

Ω

VGS = +5.8V

VDS = +0.1V

Drain Source On Resistance

RDS(ON)

55

KΩ

VGS = +0.8V, VDS = +0.1V

1.18

1.18

VGS = +0.9V, VDS = +0.1V

Drain Source On Resistance

∆RDS(ON)

1.8

1.8

%

VGS = +5.8V

Tolerance

VDS = +0.1V

Drain Source On Resistance

∆RDS(ON)

0.6

0.6

%

Mismatch

Drain Source Breakdown

BVDSX

10

10

V

V- = VGS = -0.2V

Voltage

IDS = 10µA

IDS(OFF)

10

400

10

400

pA

VGS = -0.2V, VDS = +5V

V- = -5V

44

nA

TA = 125°C

IGSS

5

200

5

200

pA

VGS = +5V, VDS = 0V

11

nA

TA = 125°C

Input Capacitance

CISS

30

30

pF

Transfer Reverse Capacitance

CRSS

22

pF

Turn-on Delay Time

ton

10

10

ns

V+ = 5V, RL = 5KΩ

Turn-off Delay Time

toff

10

10

ns

V+ = 5V, RL = 5KΩ

Crosstalk

60

60

dB

f = 100KHz

ABSOLUTE MAXIMUM RATINGS

10.6V

10.6V

Operating Current

80mA

Power dissipation

500mW

Operating temperature range SAL, PAL

0°C to +70°C

Storage temperature range

-65°C to +150°C

Lead temperature, 10 seconds

+260°C

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.