ACE17446B datasheet(2/7 Pages) ACE

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ACE17446B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE17446B XX + H

Electrical Characteristics TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=250µA

Zero gate voltage drain current

IDSS

VDS=30V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=250µA

0.7

1.1

1.6

Gate leakage current

IGSS

VGS=±20V, VDS=0V

100

µA

Drain-source on-state resistance

RDS(ON)

VGS=10V, ID=20A

6.5

mΩ

VGS=4.5V, ID=20A

6.5

Forward Trans conductance

gFS

VDS = 5V, ID= 20A

Diode forward voltage

VSD

ISD=20A, VGS=0V

0.78

1.3

Maximum body-diode

continuous current

Switching

Total Gate Charge

VGS=10V, VDS=15V, ID=20A

25.2

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

3.6

Turn-on Delay Time

td (on )

VGS=10V, VDS=15V,

RL=0.75Ω,RGEN=3Ω

6.5

Turn-on Rise Time

2.5

Turn-off Delay Time

td(off)

17.5

Turn-off Fall Time

3.8

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=15V,

f=1MHz

1230

Output Capacitance

Coss

420

Reverse Transfer Capacitance

Crss

150

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

PD: PDFN3*3-8L

NN: DFN3*3-8L

Pb - free

Halogen - free

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