ACE6604B datasheet(1/5 Pages) ACE

номер детали	ACE6604B

подробное описание детали	N-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE6604B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

ACE6604B uses advanced trench technology and design to provide excellent RDS(ON) with low gate

charge. It can be used in a wide variety of applications.

Features



VDS= 60V , ID=85A



RDS(ON)@ VGS = 10V , TYP= 4.6

mΩ



RDS(ON)@ VGS = 4.5V , TYP= 5.3

mΩ

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

85

A

TA=100℃

54

Drain Current (Pulsed)*B

IDM

340

A

Power Dissipation

TA=25℃

PD

135

W

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJAis measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

DFN5*6-EP

Аналогичный номер детали - ACE6604B

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE6602B	874Kb / 6P	N-Channel Super Trench Power MOSFET VER 1.1
ACE Technology Co., LTD...	ACE6602BPN+H	874Kb / 6P	N-Channel Super Trench Power MOSFET VER 1.1

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Аналогичное описание - ACE6604B

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Аналогичный номер детали - ACE6604B

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