ACE1534B datasheet(1/6 Pages) ACE

номер детали	ACE1534B

подробное описание детали	N-Channel Power MOSFET

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE1534B

N-Channel Power MOSFET

VER 1.1

1

Description

ACE1534B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Features



VDS= 30V , ID=130A



RDS(ON)@ VGS = 10V , TYP= 1.2

mΩ



RDS(ON)@ VGS = 4.5V , TYP= 1.8

mΩ

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

130

A

TA=100℃

82

Drain Current (Pulsed)*B

IDM

520

A

Power Dissipation

TA=25℃

PD

166

W

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJAis measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

DFN5*6-EP

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