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ACE2N7002A датащи(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2N7002A датащи(HTML) 3 Page - ACE Technology Co., LTD. |
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3 / 9 page ![]() ACE2N7002A N-Channel Enhancement Mode MOSFET VER 1.1 3 Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.7 2.5 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 uA Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V 1 uA VDS=48V, VGS=0V, TJ=55℃ 10 Drain-Source On-Resistance RDS(ON) VGS=10V, ID=0.5A 2.5 6.0 Ω VGS=5V, ID=0.3A 3.3 7.0 Source-drain Current ISD 0.35 A Source-drain Current (pulsed) ISDM (2) 1.4 A Forward Trans Conductance gfs(1) VDS=10V, ID=0.5A 0.6 S Diode Forward Voltage VSD(1) VGS=0V, IS=-0.12A 0.85 V Dynamic Total Gate Charge Qg VDD=30V, VGS=5V, ID≡1A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 25 V, f = 1 MHz, VGS = 0 43 60 pF Output Capacitance Coss 20 30 Reverse Transfer Capacitance Crss 6 10 Turn-On Time td(on) VDD=30V, ID≡0.5A, RG=4.7Ω, VGS=4.5V 5 20 ns tr 15 Turn-Off Time td(off) 7 20 tf 8 (1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. |
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