Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2015. Rev. 3.0

1/6

N-channel Enhancement mode TO-220/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-252

Drain to Source Voltage

60

V

50*

A

31.5*

A

Drain current pulsed

(note 1)

200

A

Gate to Source Voltage

±20

V

Single pulsed Avalanche Energy

(note 2)

200

mJ

Repetitive Avalanche Energy

(note 1)

28

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

74

57

W

0.6

0.5

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-252

Thermal resistance, Junction to case

1.7

2.2

Thermal resistance, Case to Sink

0.5

Thermal resistance, Junction to ambient

50

70.4

*. Drain current is limited by junction temperature.

BV

I

D

: 50A

R

DS(ON)

: 10mΩ

1. Gate 2. Drain 3. Source

TO-220

TO-252

SW50N06V

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 50N06V

SW50N06V

TO-220

TUBE

2

SW D 50N06V

SW50N06V

TO-252

TUBE

1

2

3

1

2

3

Features

 High ruggedness

 R

 Gate Charge (Typ 43nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-DC, Motor control

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.